kw.\*:("S Te Zn")
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MBE growth and characterization of ZnS1-xTex and Zn1-yMgyS1-xTex alloysKOBAYASHI, M; SETIAGUNG, D. C; WAKAO, K et al.Journal of crystal growth. 1998, Vol 184-85, pp 66-69, issn 0022-0248Conference Paper
Electroluminescence characteristics of Mn-doped ZnS-ZnTe solid solutionsSINEL'NIKOV, B. M; ISHCHENKO, T. V; KRIVOSHEEVA, L. N et al.Inorganic materials. 1996, Vol 32, Num 9, pp 947-949, issn 0020-1685Article
Pressure behavior of Te isoelectronic centers in S-rich ZnS1-xTex alloyLI, G. H; FANG, Z. L; SU, F. H et al.Physica status solidi. B. Basic research. 2003, Vol 235, Num 2, pp 401-406, issn 0370-1972, 6 p.Conference Paper
Auger parameter shift and extra-atomic-relaxation of ZnS1-xTex alloysWONG, J. W. L; SUN, W. D; MA, Z. H et al.Journal of crystal growth. 2001, Vol 227-28, pp 688-692, issn 0022-0248Conference Paper
Raman scattering and photoluminescence of ZnSxTe1-x mixed crystalsLIU, N. Z; LI, G. H; ZHU, Z. M et al.Journal of physics. Condensed matter (Print). 1998, Vol 10, Num 18, pp 4119-4129, issn 0953-8984Article
Lateral-index-guided ZnCdSSe lasersSTRASSBURG, M; SCHULZ, O; POHL, U. W et al.Journal of crystal growth. 2000, Vol 214-15, pp 1054-1057, issn 0022-0248Conference Paper
Structural properties of ZnTe/Zn(S, Te)-superlattices grown by molecular beam epitaxy on (0 0 1) GaAs-substratesKORN, M; GERHARD, T; RESS, H. R et al.Journal of crystal growth. 1998, Vol 184-85, pp 62-65, issn 0022-0248Conference Paper
Temperature dependence of the responsivity of ZnS-based UV detectorsSOU, I. K; MA, Z. H; ZHANG, Z. Q et al.Journal of crystal growth. 2000, Vol 214-15, pp 1125-1129, issn 0022-0248Conference Paper
DX-like centers in n-type Al-doped ZnS1-xTex grown by molecular-beam epitaxyLIWU LU; MAK, K. K; MA, Z. H et al.Journal of crystal growth. 2000, Vol 216, Num 1-4, pp 141-146, issn 0022-0248Article
II-VI blue-green light emittersISHIBASHI, A.Journal of crystal growth. 1996, Vol 159, Num 1-4, pp 555-565, issn 0022-0248Conference Paper
Pseudomorphic separate confinement heterostructure blue-green diode lasersGRILLO, D. C; FAN, Y; OTSUKA, N et al.Applied physics letters. 1993, Vol 63, Num 20, pp 2723-2725, issn 0003-6951Article
Improvement in lasing characteristics of II-VI blue-green lasers using quaternary and ternary alloys to produce pseudomorphic heterostructuresPETRUZZELLO, J; DRENTEN, R; GAINES, J. M et al.Journal of crystal growth. 1994, Vol 138, Num 1-4, pp 686-691, issn 0022-0248Conference Paper
Operation and catastrophic optical degradation of II-VI laser diodes at output powers larger than 1 WSCHULZ, O; STRASSBURG, M; NAKANO, K et al.Physica status solidi. B. Basic research. 2002, Vol 229, Num 2, pp 943-948, issn 0370-1972Conference Paper
Low threshold II-VI laser diodes with transversal and longitudinal single-mode emissionLEGGE, M; BACHER, G; FORCHEL, A et al.Journal of crystal growth. 2000, Vol 214-15, pp 1045-1048, issn 0022-0248Conference Paper
Room-temperature continuous-wave operation of ZnSe-based blue-green laser diode grown by molecular beam epitaxyKIM, M.-D; KIM, B.-J; JEON, M.-H et al.Journal of crystal growth. 1997, Vol 175-76, pp 637-641, issn 0022-0248, 1Conference Paper
Compound-source molecular beam epitaxy for ZnCdSe/ZnCdSe/ZnSSe/ZnMgSSe laser structureOHKAWA, K; YOSHII, S; TAKEISHI, H et al.Japanese journal of applied physics. 1994, Vol 33, Num 12A, pp L1673-L1675, issn 0021-4922, 2Article
Low-threshold buried-ridge II-VI laser diodesHAASE, M. A; BAUDE, P. F; HAGEDORN, M. S et al.Applied physics letters. 1993, Vol 63, Num 17, pp 2315-2317, issn 0003-6951Article
Blue/green light emitting diodes and laser diodes based on II-VI heterostructures grown on predeposited GaAs buffer layersREN, J; EASON, D. B; WICKS, G. W et al.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1993, Vol 11, Num 3, pp 955-957, issn 1071-1023Conference Paper
High-resolution X-ray diffraction study of degrading ZnSe-based laser diodesGERHARD, T; ALBERT, D; FASCHINGER, W et al.Journal of crystal growth. 2000, Vol 214-15, pp 1049-1053, issn 0022-0248Conference Paper
Optical properties of ZnSSe/ZnMgSSe quantum wellsCHUNG, T.-Y; OH, J. H; LEE, S.-G et al.Semiconductor science and technology. 1997, Vol 12, Num 6, pp 701-707, issn 0268-1242Article
Microscopic defect induced slow-mode degradation in II-VI based blue-green laser diodesADACHI, M; ZAW MIN AUNG; NAKANO, K et al.Journal of crystal growth. 2000, Vol 214-15, pp 1035-1039, issn 0022-0248Conference Paper
MBE growth of monolithic MgZnSSe/ZnSSE/CdZnSE microcavity led structuresUUSIMAA, P; RINTA-MÖYKKY, A; ORSILA, S et al.Journal of crystal growth. 1998, Vol 184-85, pp 783-786, issn 0022-0248Conference Paper
Study on stacking faults and microtwins in wide bandgap II-VI semiconductor heterostructures grown on GaAsHUA, G. C; GRILLO, D. C; NG, T. B et al.Journal of electronic materials. 1996, Vol 25, Num 2, pp 263-267, issn 0361-5235Conference Paper
Defect studies in ZnSSe and ZnMgSSe by chemical etching and transmission electron microscopySHIRAISHI, M; TOMIYA, S; TANIGUCHI, S et al.Physica status solidi. A. Applied research. 1995, Vol 152, Num 2, pp 377-383, issn 0031-8965Article
Continuous-wave, room temperature, ridge waveguide green-blue diode laserSALOKATVE, A; JEON, H; GUNSHOR, R. L et al.Electronics Letters. 1993, Vol 29, Num 25, pp 2192-2194, issn 0013-5194Article
